Abstract: This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded ...
Abstract: Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic discharge (ESD) protection applications. In this letter, an enhanced GGNMOS, called the EGGNMOS, is proposed and ...
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